Article

Modeling of electron gate current and post-stress drain current of p-type silicon-on-insulator MOSFETs

Chorng-Jye Sheu ; Sheng-Lyang Jang

2003
Pergamon Oxford (GBR)

Localisation: CNUDST (TUN01)
Code de rangement: Br.BIB.302

Published in: Solid-State Electronics: vol. 47 (no 4), pp. 705-711

The record appears in these collections:
Articles & Preprints > Articles

 Record created 2018-02-09, last modified 2018-02-09


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