1.
| Comparison of pulsed electron beam annealed and pulsed ruby laser annealed ion implanted silicon
/ Wilson, S.-R. ; Appleton, B.-R. ; White, C.-W. ; Narayan, J.
, 1978
[Conf. 781113-24]
|
2.
| Dopant profile changed induced by pulsed laser annealing
/ White, C.-W. ; Christie, W.-H. ; Pronko, P.-P. ; Appleton, B.-R.
, 1978
[Conf-780 932-7]
|
3.
| Extent of annealed or melted regions as a function of energy of pulsed laser irradiation
/ Narayan, J. ; White, C.-W.
, 1978
[Conf-781121-20]
|
4.
| Comparison of effects of pulsed ruby laser and pulsed electron beam annealing of 75 As+ implanted silicon
/ Wilson, S.-R. ; Appleton, B.-R. ; White, C.-W. ; Narayan, J.
, 1978
[Conf-781121-21]
|
5.
| New materials properties achievable by ion implantation doping and laser processing
/ Appleton, B.-R. ; Larson, B.-C. ; White, C.-W. ; Narayan, J.
, 1978
[Conf-781121-22]
|
6.
| Laser annealing of ion implanted silicon
/ White, C.-W. ; Narayan, J. ; Young, R.-T.
, 1978
[Conf 781167-2]
|
7.
| Lattice location of As and Sb implanted in silicon after annealing with a pulsed ruby laser
/ Wilson, S.-R. ; White, C.-W. ; Pronko, P.-P. ; Young, R.-T.
, NTIS
[Conf-781167-3]
|