Technical and Scientific Information Portal 7 records found  Search took 0.02 seconds. 
1. Comparison of pulsed electron beam annealed and pulsed ruby laser annealed ion implanted silicon / Wilson, S.-R. ; Appleton, B.-R. ; White, C.-W. ; Narayan, J. , 1978 [Conf. 781113-24]
2. Dopant profile changed induced by pulsed laser annealing / White, C.-W. ; Christie, W.-H. ; Pronko, P.-P. ; Appleton, B.-R. , 1978 [Conf-780 932-7]
3. Extent of annealed or melted regions as a function of energy of pulsed laser irradiation / Narayan, J. ; White, C.-W. , 1978 [Conf-781121-20]
4. Comparison of effects of pulsed ruby laser and pulsed electron beam annealing of 75 As+ implanted silicon / Wilson, S.-R. ; Appleton, B.-R. ; White, C.-W. ; Narayan, J. , 1978 [Conf-781121-21]
5. New materials properties achievable by ion implantation doping and laser processing / Appleton, B.-R. ; Larson, B.-C. ; White, C.-W. ; Narayan, J. , 1978 [Conf-781121-22]
6. Laser annealing of ion implanted silicon / White, C.-W. ; Narayan, J. ; Young, R.-T. , 1978 [Conf 781167-2]
7. Lattice location of As and Sb implanted in silicon after annealing with a pulsed ruby laser / Wilson, S.-R. ; White, C.-W. ; Pronko, P.-P. ; Young, R.-T. , NTIS [Conf-781167-3]

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